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? 2001-2012 microchip technology inc. ds21662f-page 1 tc2014/2015/2185 features ? low supply current: 80 a (max) ? low dropout voltage: 140 mv (typ.) @ 150 ma ? high-output voltage accuracy: 0.4% (typ.) ? standard or custom output voltages ? power-saving shutdown mode ? reference bypass input for ultra low-noise operation ? fast shutdown response time: 60 sec (typ.) ? overcurrent and overtemperature protection ? space-saving 5-pin sot-23a package ? pin-compatible upgrades for bipolar regulators ? wide operating temperature range: -40c to +125c ? standard output voltage options: - 1.8v, 2.5v, 2.6v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v, 5.0v applications ? battery-operated systems ? portable computers ? medical instruments ? instrumentation ? cellular/gsm/phs phones ? linear post-regulator for smps ? pagers related literature ? application notes: an765, an766, an776 and an792 package type general description the tc2014, tc2015 and tc2185 are high-accuracy (typically 0.4%) cmos upgrades for bipolar low drop-out regulators (ldos), such as the lp2980. total supply current is typically 55 a; 20 to 60 times lower than in bipolar regulators. the key features of the device include low noise oper- ation (plus bypass reference), low dropout voltage ? typically 45 mv for the tc2014, 90 mv for the tc2015, and 140 mv for the tc2185, at full load ? and fast response to step changes in load. supply current is reduced to 0.5 a (max) and v out falls to zero when the shutdown input is low. these devices also incorporate overcurrent and overtemperature protection. the tc2014, tc2015 and tc2185 are stable with an output capacitor of 1 f and have maximum output currents of 50 ma, 100 ma and 150 ma, respectively. for higher-output current versions, see the tc1107 (ds21356), tc1108 (ds21357) and tc1173 (ds21362) (i out = 300 ma) data sheets. typical application tc2014 tc2015 tc2185 1 3 4 5 2 bypass gnd v out v in shdn 5-pin sot-23a 0.01 f reference bypass cap (optional) shutdown control (from power control logic) tc2014 tc2015 tc2185 v in 1 2 34 5 v in v out bypass shdn gnd v out 1f 1f + + 50 ma, 100 ma, 150 ma cmos ldos with shutdown and reference bypass
tc2014/2015/2185 ds21662f-page 2 ? 2001-2012 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings ? input voltage ................................................................... 7.0v output voltage ....................................... (? 0.3) to (v in + 0.3) operating temperature ......................... ? 40c < t j < 125c storage temperature.................................. ? 65c to +150c maximum voltage on any pin ................ v in +0.3v to ? 0.3v maximum junction temperature ...................... ............ 150c ? notice: stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. electrical characteristics electrical specifications: unless otherwise specified, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. boldface type specifications apply for juncti on temperature of -40c to +125c. parameters sym min typ max units conditions input operating voltage v in 2.7 ? 6.0 v note 1 maximum output current i outmax 50 ??ma tc2014 100 ?? tc2015 150 ?? tc2185 output voltage v out v r ? 2.0% v r 0.4% v r + 2.0% v note 2 v out temperature coefficient tcv out ?20?ppm/c note 3 ? 40 ? line regulation ? v out / ? v in ?0.05 0.5 %(v r + 1v) < v in < 6v load regulation (note 4) ? v out /v out -1.0 0.33 +1.0 % tc2014 ; tc2015 :i l = 0.1 ma to i outmax -2.0 0.43 +2.0 tc2185 :i l = 0.1 ma to i outmax (note 4) dropout voltage v in ? v out ?2?mv note 5 i l = 100 a ?45 70 i l = 50 ma ?90 140 tc2015 ; tc2185 i l = 100 ma ? 140 210 tc2185 i l = 150 ma supply current i in ?55 80 a shdn = v ih , i l = 0 shutdown supply current i insd ?0.050.5ashdn = 0v power supply rejection ratio psrr ? 55 ? db f ? 1 khz, cbypass = 0.01 f output short circuit current i outsc ? 160 300 ma v out = 0v note 1: the minimum v in has to meet two conditions: v in = 2.7v and v in = v r + v dropout . 2: v r is the regulator output voltage setting. for example: v r = 1.8v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v. 3: 4: regulation is measured at a constant junction temperature usin g low duty cycle pulse testing. load regulation is tested over a load range from 1.0 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specif ications are for a current pulse equal to i max at v in = 6v for t = 10 ms. 7: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. t a , t j , ? ja ). 8: time required for v out to reach 95% of v r (output voltage setting), after v shdn is switched from 0 to v in . tcv out v outmax v outmin ? ?? 10 6 ? ? v out t ? ? --------------------------------------------------------------------------- - =
? 2001-2012 microchip technology inc. ds21662f-page 3 tc2014/2015/2185 temperature characteristics thermal regulation ? v out / ? p d ?0.04? v/w note 6 , note 7 thermal shutdown die temperature t sd ? 160 ? c output noise en ? 200 ? nv/ ? hz i l = i outmax , f = 10 khz 470 pf from bypass to gnd response time (from shutdown mode) (note 8) t r ?60?sv in = 4v, i l = 30 ma, c in = 1 f, c out = 10 f shdn input shdn input high threshold v ih 60 ??%v in v in = 2.5v to 6.0v shdn input low threshold v il ?? 15 %v in v in = 2.5v to 6.0v electrical characteristics (continued) electrical specifications: unless otherwise specified, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. boldface type specifications apply for juncti on temperature of -40c to +125c. parameters sym min typ max units conditions note 1: the minimum v in has to meet two conditions: v in = 2.7v and v in = v r + v dropout . 2: v r is the regulator output voltage setting. for example: v r = 1.8v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v. 3: 4: regulation is measured at a constant junction temperature usi ng low duty cycle pulse testing. load regulation is tested over a load range from 1.0 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specif ications are for a current pulse equal to i max at v in = 6v for t = 10 ms. 7: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. t a , t j , ? ja ). 8: time required for v out to reach 95% of v r (output voltage setting), after v shdn is switched from 0 to v in . tcv out v outmax v outmin ? ?? 10 6 ? ? v out t ? ? --------------------------------------------------------------------------- - = electrical specifications: unless otherwise noted, v dd = +2.7v to +6.0v and v ss = gnd. parameters sym min typ max units conditions temperature ranges: extended temperature range t a -40 ? +125 c operating temperature range t a -40 ? +125 c storage temperature range t a -65 ? +150 c thermal package resistances: thermal resistance, 5l-sot-23 ? ja ?255? c/w
tc2014/2015/2185 ds21662f-page 4 ? 2001-2012 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-1: supply current vs. junction temperature. figure 2-2: load regulation vs. supply voltage. figure 2-3: output voltage vs. junction temperature. figure 2-4: output voltage vs. junction temperature. figure 2-5: output voltage vs. supply voltage. figure 2-6: dropout voltage vs. junction temperature. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 45.0 48.0 51.0 54.0 57.0 60.0 63.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) i dd (a) v r = 1.8v c out = 3.3 f v in = 2.8v v in = 6.0v -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 supply voltage (v) load regulation (%) v r = 1.8v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 1.790 1.795 1.800 1.805 1.810 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v in = 6.0v v in = 2.8v v r = 1.8v c out = 3.3 f i l = 0.1 ma 1.785 1.790 1.795 1.800 1.805 1.810 1.815 1.820 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v r = 1.8v c out = 3.3 f i l = 150 ma v in = 2.8v v in = 6.0v 1.785 1.79 1.795 1.8 1.805 1.81 1.815 1.82 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 supply voltage (v) output voltage (v) v r = 1.8v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) dropout voltage (v) v r = 1.8v c out = 3.3 f i l = 20 ma i l = 50 ma i l = 100 ma i l = 150 ma note: dropout voltage is not a tested parameter for 1.8v. v in (min) 2.7v
? 2001-2012 microchip technology inc. ds21662f-page 5 tc2014/2015/2185 note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-7: supply current vs. junction temperature. figure 2-8: load regulation vs. supply voltage. figure 2-9: output voltage vs. junction temperature. figure 2-10: output voltage vs. junction temperature. figure 2-11: output voltage vs. supply voltage. figure 2-12: dropout voltage vs. junction temperature. 44.0 46.0 48.0 50.0 52.0 54.0 56.0 58.0 60.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) i dd (a) v r = 2.7v c out = 3.3 f v in = 2.8v v in = 6.0v -0.5 -0.3 -0.1 0.1 0.3 0.5 3.7 4 4.3 4.6 4.9 5.2 5.5 5.8 supply voltage (v) load regulation (%) v r = 2.7v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 2.670 2.672 2.674 2.676 2.678 2.680 2.682 2.684 2.686 2.688 2.690 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v in = 6.0v v in = 3.7v v r = 2.7v c out = 3.3 f i l = 0.1 ma 2.665 2.670 2.675 2.680 2.685 2.690 2.695 2.700 2.705 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v r = 2.7v c out = 3.3 f i l = 150 ma v in = 3.7v v in = 6.0v 2.665 2.67 2.675 2.68 2.685 2.69 2.695 2.7 2.705 3.7 4 4.3 4.6 4.9 5.2 5.5 5.8 supply voltage (v) output voltage (v) v r = 2.7v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 0.000 0.040 0.080 0.120 0.160 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) dropout voltage (v) v r = 2.7v c out = 3.3 f i l = 20 ma i l = 50 ma i l = 100 ma i l = 150 ma
tc2014/2015/2185 ds21662f-page 6 ? 2001-2012 microchip technology inc. note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-13: supply current vs. junction temperature. figure 2-14: output voltage vs. junction temperature. figure 2-15: load regulation vs. junction temperature. figure 2-16: dropout voltage vs. junction temperature. figure 2-17: load transient response. (c out = 1 f). figure 2-18: load transient response. (c out = 10 f). 45 48 51 54 57 60 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) i dd (a) v r = 5.0v c out = 3.3 f v in = 6.0v 4.93 4.94 4.95 4.96 4.97 4.98 4.99 5.00 5.01 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) i l = 100 ma v r = 5.0v c out = 3.3 f v in = 6.0v i l = 150 ma i l = 0.1 ma -0.40 -0.30 -0.20 -0.10 0.00 0.10 0.20 0.30 0.40 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) load regulation (%) v r = 5.0v c out = 3.3 f v in = 6.0 v i l = 50 ma i l = 100 ma i l = 150 ma 0.00 0.02 0.04 0.06 0.08 0.10 0.12 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) dropout voltage (v) v r = 5.0v c out = 3.3 f i l = 50 ma i l = 100 ma i l = 150 ma 150ma load 100ma load current 100mv/div v in = 3.8v v out = 2.8v c in = 1 f ceramic c out = 1 f ceramic frequency = 1 khz v out 150ma load 100ma load current 100mv / div v in = 3.0v v out = 2.8v c in = 1 f ceramic c out = 10 f ceramic frequency = 10 khz v out
? 2001-2012 microchip technology inc. ds21662f-page 7 tc2014/2015/2185 note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-19: line transient response. (c out = 1 f). figure 2-20: load transient response in dropout. (c out = 10 f). figure 2-21: shutdown delay time. figure 2-22: wake-up response. figure 2-23: psrr vs. frequency (c out = 1 f ceramic). figure 2-24: psrr vs. frequency (c out = 10 f ceramic). 100ma 150ma v out 100mv/div v in = 3.105v v out = 3.006v c in = 1 f ceramic c out = 10 f ceramic r load = 20 -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 100000 0 frequency (hz) power supply ripple rejection (db) v in = 4.0v v inac = 100 mv v outdc = 3.0v c out = 1f ceramic c bypass = 0.01 f ceramic i out = 50 ma i out = 150 ma i out = 100 ma 10 100 1k 10k 100k 1m -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 100000 0 frequency (hz) power supply ripple rejection (db) v in = 4.0v v inac = 100 mv v outdc = 3.0v c out = 10 f ceramic c bypass = 0.01 f ceramic i out = 150 ma i out = 100 ma 10 100 1k 10k 100k 1m
tc2014/2015/2185 ds21662f-page 8 ? 2001-2012 microchip technology inc. note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-25: psrr vs. frequency (c out = 10 f tantalum). figure 2-26: output noise vs. frequency. -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 100000 0 frequency (hz) power supply ripple rejection (db) v in = 4.0v v inac = 100 mv v outdc = 3.0v c out = 10 f tantalum i out = 150 ma c bypass = 0.01 f c bypass = 0 f 10 100 1k 10k 100k 1m 0.001 0.010 0.100 1.000 10.000 10 100 1000 10000 100000 100000 0 frequency (hz) noise (v/ hz) v in = 4.0v v outdc = 3.0v i out = 100 a c bypass = 470 pf c out = 10 f c out = 1 f 10 100 1k 10k 100k 1m 1 0.1 0.10
? 2001-2012 microchip technology inc. ds21662f-page 9 tc2014/2015/2185 3.0 pin descriptions the descriptions of the pins are described in table 3-1. table 3-1: pin function table 3.1 unregulated supply input (v in ) connect the unregulated input supply to the v in pin. if there is a large distance between the input supply and the ldo regulator, some input capacitance is neces- sary for proper operation. a 1 f capacitor, connected from v in to ground, is recommended for most applications. 3.2 ground terminal (gnd) connect the unregulated input supply ground return to gnd. also connect one side of the 1 f typical input decoupling capacitor close to this pin and one side of the output capacitor c out to this pin. 3.3 shutdown control input (shdn ) the regulator is fully enabled when a logic-high is applied to shdn . the regulator enters shutdown when a logic-low is applied to this input. during shutdown, the output voltage falls to zero and the supply current is reduced to 0.5 a (max). 3.4 reference bypass input (bypass) connecting a low-value ceramic capacitor to bypass will further reduce output voltage noise and improve the power supply ripple rejection (psrr) performance of the ldo. typical values from 470 pf to 0.01 f are suggested. while smaller and larger values can be used, these affect the speed at which the ldo output voltage rises when input power is applied. the larger the bypass capacitor, the slower the output voltage will rise. 3.5 regulated voltage output (v out ) connect the output load to v out of the ldo. also con- nect one side of the ldo output de-coupling capacitor as close as possible to the v out pin. pin no. symbol description 1v in unregulated supply input 2 gnd ground terminal 3 shdn shutdown control input 4 bypass reference bypass input 5v out regulated voltage output
tc2014/2015/2185 ds21662f-page 10 ? 2001-2012 microchip technology inc. 4.0 detailed description the tc2014, tc2015 and tc2185 are precision fixed- output voltage regulators (if an adjustable version is needed, see the tc1070, tc1071 and tc1187 (ds21353) data sheet). unlike bipolar regulators, the tc2014, tc2015 and tc2185 supply current does not increase with load current. in addition, the ldo?s out- put voltage is stable using 1 f of ceramic or tantalum capacitance over the entire specified input voltage range and output current range. figure 4-1 shows a typical application circuit. the reg- ulator is enabled anytime the shutdown input (shdn ) is at or above v ih , and disabled (shutdown) when shdn is at or below v il . shdn may be controlled by a cmos logic gate or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, the supply current decreases to 0.05 a (typical) and v out falls to zero volts. figure 4-1: typical application circuit. 4.1 bypass input a 0.01 f ceramic capacitor, connected from the bypass input to ground, reduces noise present on the internal reference, which, in turn, significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but the result is a longer time period to rated output voltage when power is initially applied. 4.2 output capacitor a 1 f (min) capacitor from v out to ground is required. the output capacitor should have an effective series resistance (esr) of 0.01 ? to 5 ? for v out ? 2.5v, and 0.05 ? . to 5 ? for v out < 2.5v. ceramic, tantalum or alu- minum electrolytic capacitors can be used. when using ceramic capacitors, x5r and x7r dielectric material are recommended due to their stable tolerance over temperature. however, other dielectrics can be used as long as the minimum output capacitance is maintained. 4.3 input capacitor a 1 f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the reg- ulator and this ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capacitors can be used (since many aluminum electro- lytic capacitors freeze at approximately -30c, solid tantalum are recommended for applications operating below -25c). when operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 0.01 f reference bypass cap (optional) shutdown control (from power control logic) tc2014 tc2015 tc2185 v in 1 2 34 5 v out bypass shdn gnd v out 1f 1f battery + + +
? 2001-2012 microchip technology inc. ds21662f-page 11 tc2014/2015/2185 5.0 thermal considerations 5.1 thermal shutdown integrated thermal protection circuitry shuts the regula- tor off when the die temperature exceeds approxi- mately 160c. the regulator remains off until the die temperature cools to approximatley 150c. 5.2 power dissipation the amount of power the regulator dissipates is primar- ily a function of input voltage, output voltage and output current. the following equation is used to calculate worst-case power dissipation. equation 5-1: the maximum allowable power dissipation (p dmax ) is a function of the maximum ambient temperature (t amax ), the maximum allowable die temperature (t jmax ) (+125c) and the thermal resistance from junc- tion-to-air ( ? ja ). the 5-pin sot-23a package has a ? ja of approximately 220c/watt when mounted on a typical two-layer fr4 dielectric copper-clad pc board. equation 5-2: the p d equation can be used in conjunction with the p dmax equation to ensure that regulator thermal operation is within limits. for example: actual power dissipation: maximum allowable power dissipation: in this example, the tc2014 dissipates a maximum of only 26.7 mw; far below the allowable limit of 318 mw. in a similar manner, the p d and p dmax equations can be used to calculate maximum current and/or input voltage limits. 5.3 layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower ? ja and, therefore, increase the maximum allowable power dissipation limit. p d v inmax v outmin ? ?? i lmax ? where: p d = worst-case actual power dissipation v inmax = maximum voltage on v in v outmin = minimum regulator output voltage i lmax = maximum output (load) current where all terms are previously defined. p dmax t jmax t amax ? ? ja -------------------------------------- - = given: v inmax = 3.0v +10% v outmin = 2.7v ? 2.5% i loadmax =40ma t jmax = +125c t amax = +55c find: 1. actual power dissipation 2. maximum allowable dissipation p d v inmax v outmin ? ?? i lmax = 3.0 1.1 ? ?? 2.7 0.975 ? ?? ? ?? 40 10 3 ? ? = 26.7 mw = p dmax t jmax t amax ? ? ja -------------------------------------- - = 125 55 ? 220 -------------------- - = 318 mw =
tc2014/2015/2185 ds21662f-page 12 ? 2001-2012 microchip technology inc. 6.0 packaging information 6.1 package marking information 6.2 taping form ? & ? represents part number code + temperature range and voltage ? represents year and 2-month period code ? represents lot id number ???? table 6-1: part number code and temperature range (v) tc2014 tc2015 tc2185 1.8 pa ra ua 2.5 pb rb ub 2.6 ph rh uh 2.7 pc rc uc 2.8 pd rd ud 2.85 pe re ue 3.0 pf rf uf 3.3 pg rg ug 5.0 pj rj uj carrier tape, number of components per reel and reel size: package carrier width (w) pitch (p) part per full reel reel size 5-pin sot-23a 8 mm 4 mm 3000 7 in. component taping orientation for 5-pin sot-23a (eiaj sc-74a) devices device marking pin 1 user direction of feed standard reel component orientation for 713 suffix device (mark right side up) w p
? 2001-2012 microchip technology inc. ds21662f-page 13 tc2014/2015/2185 5-lead plastic small outline transistor (ot) (sot23) 1 p d b n e e1 l c ? ? ? a2 a a1 p1 10 5 0 10 5 0 b mold draft angle bottom 10 5 0 10 5 0 a mold draft angle top 0.50 0.43 0.35 .020 .017 .014 b lead width 0.20 0.15 0.09 .008 .006 .004 c lead thickness 10 5 0 10 5 0 f foot angle 0.55 0.45 0.35 .022 .018 .014 l foot length 3.10 2.95 2.80 .122 .116 .110 d overall length 1.75 1.63 1.50 .069 .064 .059 e1 molded package width 3.00 2.80 2.60 .118 .110 .102 e overall width 0.15 0.08 0.00 .006 .003 .000 a1 standoff 1.30 1.10 0.90 .051 .043 .035 a2 molded package thickness 1.45 1.18 0.90 .057 .046 .035 a overall height 1.90 .075 p1 outside lead pitch (basic) 0.95 .038 p pitch 5 5 n number of pins max nom min max nom min dimension limits millimeters inches * units dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .005" (0.127mm) per s ide. notes: eiaj equivalent: sc-74a drawing no. c04-091 * controlling parameter revised 09-12-05 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
tc2014/2015/2185 ds21662f-page 14 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21662f-page 15 tc2014/2015/2185 appendix a: revision history revision f (december 2012) ? added a note to each package outline drawing. revision e (may 2006) ? page 1: added overtemperature to bullet for over- current protection in features and general descrip- tion verbiage. ? page 3: added thermal shutdown die tempera- ture to electrical characteristics table. ? page 3: added thermal characteristics table. ? page 5: added new section 5.1 and new ver- biage. ? page 13: updated package outline drawing. revision d (november 2004) ? page 2: changed absolute maximum ratings from 6.5v to 7.0v. ? packaging information: added package codes for 2.6v and 5.0v options. ? product identification system: added 2.6v and 5.0v to output voltage options. revision c (december 2002) ? numerous changes revision b (may 2002) ? numerous changes revision a (may 2001) ? original release of this document.
tc2014/2015/2185 ds21662f-page 16 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21662f-page 17 tc2014/2015/2185 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . device: tc2014: 50 ma ldo with shutdown and v ref bypass tc2015: 100 ma ldo with shutdown and v ref bypass tc2185: 150 ma ldo with shutdown and v ref bypass output voltage: xx = 1.8v xx = 2.5v xx = 2.6v xx = 2.7v xx = 2.8v xx = 2.85v xx = 3.0v xx = 3.3v xx = 5.0v temperature range: v = -40c to +125c package: cttr = plastic small outline transistor (sot-23), 5-lead, tape and reel part no. -xx x temperature output voltage device examples: a) tc2014-1.8vcttr: 5ld sot-23-a, 1.8v, tape and reel. b) tc2014-2.85vcttr: 5ld sot-23-a, 2.85v, tape and reel. c) tc2014-3.3vcttr: 5ld sot-23-a, 3.3v, tape and reel. a) tc2015-1.8vcttr: 5ld sot-23-a, 1.8v, tape and reel. b) tc2015-2.85vcttr: 5ld sot-23-a, 2.85v, tape and reel. c) tc2015-3.0vcttr: 5ld sot-23-a, 3.0v, tape and reel. a) tc2185-1.8vcttr: 5ld sot-23-a, 1.8v, tape and reel. b) tc2185-2.8vcttr: 5ld sot-23-a, 2.8v, tape and reel. range xxxx package
tc2014/2015/2185 ds21662f-page 18 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21662f-page 19 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2001-2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620768884 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
ds21662f-page 20 ? 2001-2012 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://www.microchip.com/ support web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 cleveland independence, oh tel: 216-447-0464 fax: 216-447-0643 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 indianapolis noblesville, in tel: 317-773-8323 fax: 317-773-5453 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway harbour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8569-7000 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - chongqing tel: 86-23-8980-9588 fax: 86-23-8980-9500 china - hangzhou tel: 86-571-2819-3187 fax: 86-571-2819-3189 china - hong kong sar tel: 852-2943-5100 fax: 852-2401-3431 china - nanjing tel: 86-25-8473-2460 fax: 86-25-8473-2470 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8864-2200 fax: 86-755-8203-1760 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xian tel: 86-29-8833-7252 fax: 86-29-8833-7256 china - xiamen tel: 86-592-2388138 fax: 86-592-2388130 china - zhuhai tel: 86-756-3210040 fax: 86-756-3210049 asia/pacific india - bangalore tel: 91-80-3090-4444 fax: 91-80-3090-4123 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - osaka tel: 81-6-6152-7160 fax: 81-6-6152-9310 japan - tokyo tel: 81-3-6880- 3770 fax: 81-3-6880-3771 korea - daegu tel: 82-53-744-4301 fax: 82-53-744-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - kuala lumpur tel: 60-3-6201-9857 fax: 60-3-6201-9859 malaysia - penang tel: 60-4-227-8870 fax: 60-4-227-4068 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-5778-366 fax: 886-3-5770-955 taiwan - kaohsiung tel: 886-7-213-7828 fax: 886-7-330-9305 taiwan - taipei tel: 886-2-2508-8600 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 worldwide sales and service 11/29/12

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